Conducting tip atomic force microscopy analysis of aluminum oxide barrier defects decorated by electrodeposition

Citation
J. Carrey et al., Conducting tip atomic force microscopy analysis of aluminum oxide barrier defects decorated by electrodeposition, APPL PHYS L, 79(19), 2001, pp. 3158-3160
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
19
Year of publication
2001
Pages
3158 - 3160
Database
ISI
SICI code
0003-6951(20011105)79:19<3158:CTAFMA>2.0.ZU;2-N
Abstract
We show that the electrodeposition of Ni80Fe20 on top of a thin aluminum ox ide barrier leads to particle growth occurring on preferential nucleation c enters. The particle sites are attributed to local defects in the aluminum oxide barrier. As a function of the thickness of the barrier, different gro wth modes can occur. For thinner barriers, new nucleation centers are creat ed during electrodeposition. The resistance of the defects, characterized b y conducting atomic force microscopy, ranges from less than 10(4) to greate r than 10(12) Omega. Various I(V) characteristics were also obtained, depen ding on the resistance of the defect. These results suggest that this exper imental technique could be a very interesting one with which to fabricate n anoconstrictions dedicated to ballistic magnetoresistance studies. (C) 2001 American Institute of Physics.