J. Carrey et al., Conducting tip atomic force microscopy analysis of aluminum oxide barrier defects decorated by electrodeposition, APPL PHYS L, 79(19), 2001, pp. 3158-3160
We show that the electrodeposition of Ni80Fe20 on top of a thin aluminum ox
ide barrier leads to particle growth occurring on preferential nucleation c
enters. The particle sites are attributed to local defects in the aluminum
oxide barrier. As a function of the thickness of the barrier, different gro
wth modes can occur. For thinner barriers, new nucleation centers are creat
ed during electrodeposition. The resistance of the defects, characterized b
y conducting atomic force microscopy, ranges from less than 10(4) to greate
r than 10(12) Omega. Various I(V) characteristics were also obtained, depen
ding on the resistance of the defect. These results suggest that this exper
imental technique could be a very interesting one with which to fabricate n
anoconstrictions dedicated to ballistic magnetoresistance studies. (C) 2001
American Institute of Physics.