Citation
Pa. Crozier et al., Direct quantitative measurement of compositional enrichment and variationsin InyGa1-yAs quantum dots, APPL PHYS L, 79(19), 2001, pp. 3170-3172
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
79
Issue
19
Year of publication
2001
Pages
3170 - 3172
Database
ISI
SICI code
0003-6951(20011105)79:19<3170:DQMOCE>2.0.ZU;2-T
Abstract
Assessment of the composition of quantum dots on the nanoscale is crucial f
or a deeper understanding of both the growth mechanisms and the properties
of these materials. In this letter, we discuss a direct method to obtain a
quantitative evaluation of the In variation across nanometer-sized InGaAs q
uantum dots embedded in a GaAs matrix, by means of electron energy-loss spe
ctroscopy in a scanning transmission electron microscope. (C) 2001 American
Institute of Physics.