Initial and later stages of anodic oxide formation on Cu, chemical aspects, structure and electronic properties

Citation
Hh. Strehblow et al., Initial and later stages of anodic oxide formation on Cu, chemical aspects, structure and electronic properties, ELECTR ACT, 46(24-25), 2001, pp. 3755-3766
Citations number
32
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHIMICA ACTA
ISSN journal
00134686 → ACNP
Volume
46
Issue
24-25
Year of publication
2001
Pages
3755 - 3766
Database
ISI
SICI code
0013-4686(20010815)46:24-25<3755:IALSOA>2.0.ZU;2-U
Abstract
The formation of OH adsorption layers and the initial and later stages of t he growth of anodic oxide have been studied on Cu(111) single crystal surfa ces with STM. In 0.1 M NaOH Cu forms OH- adsorption layers for E > - 0.57 V (SHE) whereas oxide formation occurs at E > - 0.22 V. The adsorption of OH - and oxide formation can be followed by in situ electrochemical STM. At su fficiently high negative potentials even time resolved investigations becom e possible. OH adsorption goes along with a surface reconstruction. Oxide f ormation starts with small non-crystalline grains and with oxide crystals i n a later stage. In borax buffer pH 9.2 no stable image is obtained during the growth of the Cu2O films with d > 1 nm whereas the images of the duplex layer formed at higher potentials are stable again. These details are disc ussed on the basis of previous results on the chemical composition of the p assive layer in alkaline solutions and its semiconducting properties obtain ed from XPS, UPS, and electrochemical and photoelectrochemical investigatio ns. (C) 2001 Elsevier Science Ltd. All rights reserved.