Origins and effects of radical-induced re-oxidation in ultra-thin remote plasma nitrided oxides

Authors
Chen, CH Fang, YK Hsieh, WT Ting, SF Yu, MC Wang, MF Chen, CL Yao, LG Chen, SC Yu, CH Liang, MS
Citation
Ch. Chen et al., Origins and effects of radical-induced re-oxidation in ultra-thin remote plasma nitrided oxides, ELECTR LETT, 37(22), 2001, pp. 1367-1369
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
22
Year of publication
2001
Pages
1367 - 1369
Database
ISI
SICI code
0013-5194(20011025)37:22<1367:OAEORR>2.0.ZU;2-D
Abstract
The physical and electrical properties of ultra-thin remote plasma nitrided oxides (RPNO) in the 10 to 30 Angstrom range were extensively investigated , Experimental results show that a significant physical thickness increase is observed in RPNO with base oxide less than 20 Angstrom owing to the pene tration of nitrogen radicals. Thinner base oxides result m, worse equivalen t oxide thickness (EOT) scalability, thus leading to similar to 14 Angstrom manufacturability EOT limit for RPN gate dielectrics.