2W reliable operation in 50 mu m-wide InGaAsP/InGaP/AlGaAs (lambda=810 nm)SQW diode lasers with tensile-strained InGaP barriers

Authors
Yamanaka, F Wada, M Kuniyasu, T Ohgoh, T Fukunaga, T Hayakawa, T
Citation
F. Yamanaka et al., 2W reliable operation in 50 mu m-wide InGaAsP/InGaP/AlGaAs (lambda=810 nm)SQW diode lasers with tensile-strained InGaP barriers, ELECTR LETT, 37(21), 2001, pp. 1289-1290
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
21
Year of publication
2001
Pages
1289 - 1290
Database
ISI
SICI code
0013-5194(20011011)37:21<1289:2ROI5M>2.0.ZU;2-1
Abstract
A new InGaAsP/InGaP/AlGaAs (lambda = 810 nm) laser with tensile-strained In GaP barriers, broad waveguide structure and current blocking region near th e facet is reported. 2 W continuous wave operation over 2000 h from a 50 mu m aperture was achieved.