F. Yamanaka et al., 2W reliable operation in 50 mu m-wide InGaAsP/InGaP/AlGaAs (lambda=810 nm)SQW diode lasers with tensile-strained InGaP barriers, ELECTR LETT, 37(21), 2001, pp. 1289-1290
A new InGaAsP/InGaP/AlGaAs (lambda = 810 nm) laser with tensile-strained In
GaP barriers, broad waveguide structure and current blocking region near th
e facet is reported. 2 W continuous wave operation over 2000 h from a 50 mu
m aperture was achieved.