lambda=8.3 mu m GaAs/AlAs quantum cascade lasers incorporating InAs monolayers

Authors
Wilson, LR Cockburn, JW Carder, DA Steer, MJ Hopkinson, M Chia, CK Airey, R Hill, G
Citation
Lr. Wilson et al., lambda=8.3 mu m GaAs/AlAs quantum cascade lasers incorporating InAs monolayers, ELECTR LETT, 37(21), 2001, pp. 1292-1293
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
21
Year of publication
2001
Pages
1292 - 1293
Database
ISI
SICI code
0013-5194(20011011)37:21<1292:LMMGQC>2.0.ZU;2-I
Abstract
The development of GaAs-based quantum cascade lasers incorporating indirect bandgap AlAs barriers in conjunction With ultrathin InAs layers in the act ive regions of the device is reported. The InAs layers produce a downshift of the energies of the lower lasing states, allowing laser emission to be o bserved at lambda = 8.34 mum. The GaAs/InAs/AlAs devices operate in pulsed mode up to a maximum temperature of 250 K, with a characteristic temperatur e of around 200 K for T > 100 K.