Vertical-cavity surface-emitting laser diodes at 1.55 mu m with large output power and high operation temperature

Authors
Shau, R Ortsiefer, M Rosskopf, J Bohm, G Kohler, F Amann, MC
Citation
R. Shau et al., Vertical-cavity surface-emitting laser diodes at 1.55 mu m with large output power and high operation temperature, ELECTR LETT, 37(21), 2001, pp. 1295-1296
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
21
Year of publication
2001
Pages
1295 - 1296
Database
ISI
SICI code
0013-5194(20011011)37:21<1295:VSLDA1>2.0.ZU;2-9
Abstract
Improved 1.55 mum InGaAlAs/InP vertical-cavity surface-emitting lasers were fabricated in the buried tunnel junction technology yielding sub-mA thresh old currents, 0.9V threshold voltage, 10-40 Omega series resistance, output power up to 7 mW (20 degreesC, CW) and CW operation up to > 110 degreesC.