A deep submicron CMOS process compatible suspending high-Q inductor

Citation
Ch. Chen et al., A deep submicron CMOS process compatible suspending high-Q inductor, IEEE ELEC D, 22(11), 2001, pp. 522-523
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
22
Issue
11
Year of publication
2001
Pages
522 - 523
Database
ISI
SICI code
0741-3106(200111)22:11<522:ADSCPC>2.0.ZU;2-X
Abstract
A novel high-Q on-chip inductor structure called suspending inductor is dev eloped to improve the characteristics of the conventional on-chip spiral in ductor. The suspending inductor employs the air gap [1] and is supported by a set of novel metal pillars to suppress the capacitance from the metal la yer to the substrate. The measured maximum quality factor of the suspending inductor is improved from 4.8 to 6.3 in comparison to the conventional spi ral inductor. Furthermore, the frequency at maximum quality factor is raise d from 1.5-2 GHz.