Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

Noise measurements in the linear region of the device characteristics of a SIMOX N-MOSFET show the evolution of an important low-frequency Lorentzian- like noise, during the transition from fully depleted to near fully deplete d or partially depleted operation. In the kink region, the same low-frequen cy noise component co-exists with the high-frequency Lorentzian-like noise due to impact ionization. For this low-frequency noise component, a generat ion-recombination origin is proposed and supported with experimental eviden ce that indicates the involvement of deep-level bulk traps, possibly relate d to oxygen impurities, in the depleted silicon film.