A novel trench termination design for 100-V TMBS diode application

Authors
Hsu, WCW Liu, CM Kao, MJ Kung, PJ Tsai, MJ
Citation
Wcw. Hsu et al., A novel trench termination design for 100-V TMBS diode application, IEEE ELEC D, 22(11), 2001, pp. 551-552
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
22
Issue
11
Year of publication
2001
Pages
551 - 552
Database
ISI
SICI code
0741-3106(200111)22:11<551:ANTTDF>2.0.ZU;2-K
Abstract
In this letter, a novel trench termination structure that can inhibit the r everse leakage current substantially and reduce the process cost is introdu ced. For trench type power devices, such as trench MOS barrier Schottky (TM BS) diode, this new termination structure can be processed simultaneously w ith the active region without any additional mask. Simulation and experimen tal results show that TMBS diode with this new termination structure can ac hieve a reverse blocking voltage of 100 V with a leakage-current density as low as 8.4 x 10(-4) A/cm(2).