Characterization of channel hot electron injection by the subthreshold slope of NROM (TM) device

Channel hot electron (CHE) injection, is widely used as main programming me thod in flash products. The spatial distribution could only be measured ind irectly through stress-based experiments. A simple measurement technique to spatially characterize CHE injection is presented. It is shown that subthr eshold slope degradation during programming of NROM (TM) device provides th e location and distribution of the injected electrons. It is shown that inj ection takes place mostly above the drain region and thus, results in subth reshold slope degradation. It is further shown based on two-dimensional mod eling that charge distribution width is narrower than 40 nm.