Sub-500-ps 64-b ALUs in 0.18-mu m SOI/Bulk CMOS: Design and scaling trends

Citation
Sk. Mathew et al., Sub-500-ps 64-b ALUs in 0.18-mu m SOI/Bulk CMOS: Design and scaling trends, IEEE J SOLI, 36(11), 2001, pp. 1636-1646
Citations number
18
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
00189200 → ACNP
Volume
36
Issue
11
Year of publication
2001
Pages
1636 - 1646
Database
ISI
SICI code
0018-9200(200111)36:11<1636:S6AI0M>2.0.ZU;2-3
Abstract
In this paper, we present: 1) design of a single-rail energy-efficient 64-b Han-Carlson ALU, operating at 482 ps in 1.5 V, 0.18-mum bulk CMOS; 2) dire ct port of this ALU to 0.18-mum partially depleted SOI process; 3) SOI-opti mal redesign of the ALU using a novel deep-stack quaternary-tree architectu re; 4) margining for max-delay pushout due to reverse body bias in SOI desi gns; and 5) performance scaling trends of the ALU designs in 0.13-mum gener ation. We show that a direct port of the Han-Carlson ALU to 0.18-mum SOI of fers 14% performance improvement after margining. A redesign of the ALU, us ing an SOI-favored deep-stack architecture improves the margined speedup to 19%. A 10% margin was required for the SOI designs, to account for reverse body-bias-induced max-delay pushout. Preconditioning the intermediate stac k nodes in the dynamic ALU designs reduced this margin to 2%. Scaling the A LUs to 0.13-mum generation reduces the overall SOI speedup for both archite ctures to 9% and 16%, respectively, confirming the trend that speedup offer ed by SOI technology decreases with scaling.