This paper describes a 32-Mb embedded DRAM macro fabricated using 0.13-mum
triple-well 4-level Cu embedded DRAM technology, which is suitable for port
able equipment of MPEG applications. This macro can operate 230-MHz random
column access even at LON power supply condition. The peak power consumptio
n is suppressed to 198 mW in burst operation. The power-down standby mode,
which suppresses the leakage current consumption of peripheral circuitry, i
s also prepared for portable equipment. With the collaboration of array cir
cuit design and the fine Cu metallization technology, macro size of 18.9 mm
(2) and cell efficiency of 51.3% are realized even with dual interface and
triple test functions implemented.