A 1.0-V 230-MHz column access embedded DRAM for portable MPEG applications

Citation
S. Tomishima et al., A 1.0-V 230-MHz column access embedded DRAM for portable MPEG applications, IEEE J SOLI, 36(11), 2001, pp. 1728-1737
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
00189200 → ACNP
Volume
36
Issue
11
Year of publication
2001
Pages
1728 - 1737
Database
ISI
SICI code
0018-9200(200111)36:11<1728:A12CAE>2.0.ZU;2-2
Abstract
This paper describes a 32-Mb embedded DRAM macro fabricated using 0.13-mum triple-well 4-level Cu embedded DRAM technology, which is suitable for port able equipment of MPEG applications. This macro can operate 230-MHz random column access even at LON power supply condition. The peak power consumptio n is suppressed to 198 mW in burst operation. The power-down standby mode, which suppresses the leakage current consumption of peripheral circuitry, i s also prepared for portable equipment. With the collaboration of array cir cuit design and the fine Cu metallization technology, macro size of 18.9 mm (2) and cell efficiency of 51.3% are realized even with dual interface and triple test functions implemented.