PROCESSING AND CHARACTERIZATION OF AN ETCHED GROOVE PERMEABLE BASE TRANSISTOR ON GH-SIC

The Permeable Base Transistor (PBT) is generally considered as an inte resting device for high speed applications. PBTs have been fabricated on Silicon and Gallium Arsenide by a number of groups. In this paper w e reported on the fabrication of an etched groove PET structure on 6H- SiC using Ti as contact metal for all electrodes. The devices have bee n characterised by DC-measurements. The transistors show the normal IV -characteristics for a such a device except for a parasitic series dio de at the drain electrode. The breakdown voltage of the gate-drain dio de is generally as high as around 60 V even without passivation of the sidewalls of the grooves.