The Permeable Base Transistor (PBT) is generally considered as an inte
resting device for high speed applications. PBTs have been fabricated
on Silicon and Gallium Arsenide by a number of groups. In this paper w
e reported on the fabrication of an etched groove PET structure on 6H-
SiC using Ti as contact metal for all electrodes. The devices have bee
n characterised by DC-measurements. The transistors show the normal IV
-characteristics for a such a device except for a parasitic series dio
de at the drain electrode. The breakdown voltage of the gate-drain dio
de is generally as high as around 60 V even without passivation of the
sidewalls of the grooves.