Different sputtering methods, viz. rf-diode, rf-magnetron, and dc-magnetron
sputtering, have been used to increase the sensitivity of Co/Cu/Co/FeMn to
p spin valve systems by more than a factor of 2. This improvement is due to
an enhanced magnetoresistive effect DeltaR/R and a reduced anisotropy fiel
d H-k for the best sample. In the present paper the transport and magnetic
properties are discussed in the context of microstructure and interfacial q
uality of the multilayers evaluated by comprehensive transmission electron
microscopy and x-ray reflectometry investigations. The sample with the high
est sensitivity (dc-magnetron sputtered) shows less structural defects and
locally smoother interfaces than the other samples. Additionally it is show
n that the ferromagnetic interlayer exchange field is not affected by the a
pplied sputtering methods and can be well understood in terms of orange pee
l coupling. (C) 2001 American Institute of Physics.