Optical properties of BeCdSe/ZnCdMgSe strained quantum well structures

We report the optical properties of BeCdSe/ZnCdMgSe single quantum well (QW ) structures that consist of closely lattice matched ZnCdMgSe barrier layer s and a strained BeCdSe QW layer (Deltaa/a=1.95%) grown on InP substrates. Emission from the red to the green regions of the visible spectrum was obta ined from the structures with the QW thickness varying from 95 to 12 Angstr om. Efficient QW emission, dominated by an exciton recombination behavior, was observed. From the Arrhenius plot of the integrated emission intensity as a function of temperature, an activation energy of 61 meV was obtained f or a BeCdSe QW structure with a 48 Angstrom thick QW layer. Parameters that describe the temperature dependence of the near band edge emission energy and the broadening of the excitonic emission were evaluated. Our results in dicate that the BeCdSe-based QW structures are attractive for application a s red light emitters. (C) 2001 American Institute of Physics.