M. Chhowalla et al., Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition, J APPL PHYS, 90(10), 2001, pp. 5308-5317
The growth of vertically aligned carbon nanotubes using a direct current pl
asma enhanced chemical vapor deposition system is reported. The growth prop
erties are studied as a function of the Ni catalyst layer thickness, bias v
oltage, deposition temperature, C2H2:NH3 ratio, and pressure. It was found
that the diameter, growth rate, and areal density of the nanotubes are cont
rolled by the initial thickness of the catalyst layer. The alignment of the
nanotubes depends on the electric field. Our results indicate that the gro
wth occurs by diffusion of carbon through the Ni catalyst particle, which r
ides on the top of the growing tube. (C) 2001 American Institute of Physics
.