A SEMIANALYTIC MODEL OF THE PERMEABLE BASE TRANSISTOR

The I-V characteristics of the Permeable Base Transistor (PBT) has bee n investigated in order to find a simple and practical model for use i n circuit designs. Two possible approaches has been discussed, a one-d imensional analytical solution and a semi-analytical solution mixing a nalytical and empirical methods. The semi-analytical model developed i n this paper offers high accuracy and a simple and fast evaluation. Al l model parameters can be extracted from a set of I-V curves from two typical transistors with different threshold voltages. An analytical s mall signal model has been developed that agrees very well with two-di mensional simulations.