Schottky diodes on Silicon Carbide (SiC) are of interest for many appl
ications because of the relatively simple fabrication process compared
to pn diodes. In this work we have fabricated Schottky diodes by evap
oration of Ti on n-type an p-type 6H-SiC. Most of the diodes show good
rectifying behaviour with very low reverse current and an ideality fa
ctor below 1.20. The photo response of the diodes has been measured in
the range 200-400nm. The peak sensitivity varies in the range 250-300
nm depending mainly on substrate doping.