UV-SENSITIVE PHOTODETECTORS BASED ON METAL-SEMICONDUCTOR CONTACTS ON 6H-SIC

Schottky diodes on Silicon Carbide (SiC) are of interest for many appl ications because of the relatively simple fabrication process compared to pn diodes. In this work we have fabricated Schottky diodes by evap oration of Ti on n-type an p-type 6H-SiC. Most of the diodes show good rectifying behaviour with very low reverse current and an ideality fa ctor below 1.20. The photo response of the diodes has been measured in the range 200-400nm. The peak sensitivity varies in the range 250-300 nm depending mainly on substrate doping.