DEVELOPMENT OF MATERIALS FOR BLUE GREEN LIGHT EMITTERS/

We have adopted a new approach in an attempt to improve the present da y technology in preparing blue/green ZnSe light emitters. This approac h includes growth of layer structure with n-on-p configuration and the use of barrier reduction layers in between the GaAs substrate and the lower cladding layer of the device structure. In addition, we have st udied MnZnSSe quaternary alloys to replace the MgZnSSe layers which ar e normally used as cladding layers of the blue/green light emitters an d which are known to exhibit poor electrical properties.