SELECTIVE-AREA MOVPE FOR INP-BASED OPTOELECTRONIC COMPONENTS

Authors
TIDEMANDPETERSSON P ALBREKTSEN O SALZMAN J
Citation
P. Tidemandpetersson et al., SELECTIVE-AREA MOVPE FOR INP-BASED OPTOELECTRONIC COMPONENTS, Physica scripta. T, 54, 1994, pp. 194-197
Citations number
8
Categorie Soggetti
Physics
Journal title
Physica scripta. T → ACNP
ISSN journal
02811847
Volume
54
Year of publication
1994
Pages
194 - 197
Database
ISI
SICI code
0281-1847(1994)54:<194:SMFIOC>2.0.ZU;2-6
Abstract
Selective-area MOVPE of InP-based semiconductor material is discussed. As an example of its applicability, the use of the technique to make distributed feedback gratings with sub-micron period and modulated cou pling coefficient K is described. The grating pattern and the lateral variation in growth rate of the InGaAs(P) material are defined and con trolled by a SiO2 mask layer.