GROWTH OF SILICON-CARBIDE ON (100) SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY

A plasma activated gas source molecular beam epitaxy process has been developed in which the molecular beam is formed by activating a methan e-hydrogen mixture in a plasma source. Amorphous carbon growth on (100 ) silicon substrates occurs when the substrate temperature exceeds 800 degrees C. The growth of cubic silicon carbide is observed above 880 degrees C. Epitaxial silicon carbide layers are characterised using X- ray photoemission spectroscopy, atomic force microscopy, ellipsometry and Rutherford backscattering.