RBS CHANNELING SPECTROSCOPY OF GE IMPLANTED EPITAXIAL SI1-XGEX LAYERS

Si1-xGex layers were formed through high-dose germanium ion implantati on into (100)Si substrates. Two alternative implantation techniques al ong with that of the single-energy Ge+ implantation were separately ad opted: the double-energy Si+ and Ge+ method, and the double-energy Ge and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge+ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were e pitaxialy regrown by conventional furnace annealing at temperature of 525 to 600 degrees C. RES channeling spectroscopy was used for optimiz ing these implantation processes. Measurements confirm that the double -energy Ge+ and Ge++ method is optimum because of generating fewer res idual defects. Additionally, the preliminary result on the regrowth pr operties of the double-energy Ge+ and Ge++ implanted SiGe layer is als o presented.