The Permeable Base Transistor (PET) is considered to be a high frequen
cy device with simulated f(T) and f(max) values in the order of 100 GH
z In this work we present several PET devices in silicon. The fabricat
ion process steps have been developed and optimised in order to meet t
he demands of a future integration in a standard CMOS processing. Coba
lt disilicide is used for the emitter metallization and base metallisa
tion in order to form a good Schottky contact The important issues of
a fabrication process reliability and controllability are discussed in
this paper. The process steps had been analysed by standard analysis
methods. Electrical (DC) characterisation of the devices has been perf
ormed. The obtained results are in a good agreement with the 2D simula
tions.