Hydrogen co-doping in III-V semiconductors: Dopant passivation and carbon reactivation kinetics in C-GaAs

Hydrogen in semiconductors is an electrically active impurity whose interac tion with lattice point defects and impurities, might produce a strong modi fication on their physical behavior, changing some material properties, inf luencing as well, device performance. In this work we will review the main effects of hydrogen co-doping on the properties crystalline semiconductors, discuss on the driving force on the process of hydrogen incorporation in c arbon doped GaAs, grown in the presence of hydrogen. A detailed model on th e carbon reactivation kinetics, carbon, doping efficiency and carbon-hydrog en complexes behavior in MOCVD-GaAs epitaxial layers will be presented. Fin ally, we will discuss die probable relation between the beta evolution of t he high frequency and high power n-GaInP/p-GaAs/n-GaAs hetero-junction bipo lar transistor (HBT), and the hydrogen co-doping of the C:GaAs, constitutin g its base.