Thin anodic oxides (5-10 mum) were formed on n-GaSb (100) substrates by ele
ctrochemical method under galvanostatic regime employing an aqueous solutio
n (citric acid/hydrogen peroxide), at volume ratio of 5:1, changing the tim
e of growth. The thickness and index of refraction, thermal diffusivity and
quality of passivated films were obtained by IR reflectance spectroscopy,
photoacoustic spectroscopy and finally photoluminescence spectroscopy.