Composition mixture probabilistic model in the formation of semiconductor materials obtained by random growth techniques

During the obtaining of semiconductor materials by some growth techniques t he film structure forms randomly according to how the species arrive to the subtract. If the film is a material with three or more elements they can o rganize in several compounds, which have only local order and even become a morphous. As a consequence the physico-chemical parameters manifest non-typ ical behaviors other than in pure materials. In the present work we develop a dynamical-probabilistic model, which describes quantitatively such compo sition mixture and was applied on the behavior of the absorption profiles o f CdTeO films grown by radio frequency (rf) sputtering with different oxyge n concentrations. The model can be applied to films obtained by other growt h techniques.