Modeling the CVD growth kinetics of III-V compounds

Chemical vapor deposition is widely used for growing semiconductors. In it the best growing conditions are obtained on an empirical way. Its theoretic al models are sophisticated and not accurate enough to correctly explain th e experimental results. In this work, we present a general model to explain the epitaxial growth kinetics of III-V semiconductor materials by chemical vapor deposition. The model is based on a reversible chemical reaction bet ween the transporting gas and the III element at the source and the same re action, at the substrate surface. However, the model considers that the III element might have a different chemical activity at each one of those surf aces. The model explains experimental results reported in the literature on III-V materials, by several laboratories, over decades.