A new low temperature method to produce ((RE)(x)Ga1-x)(2)O-3 (1 greater tha
n or equal to x greater than or equal to 0 and RE=Eu, Yb, Pr and Tm) powder
s with high purity, high chemical homogeneity and improved crystallinity ha
s been developed. This procedure produces finely divided powders through an
exothermic reaction between the precursors. The process starts with aqueou
s solutions of RE(NO3)(3) and Ga(NO3)3 as the precursors and hydrazine as t
he (non-carbonaceous) fuel. The combustion reaction occurs when heating the
precursors between 150 and 200 degreesC in a closed vessel filled with an
inert gas (Ar), which yields (RExGa1-x)(2)O-3 directly. The preparation of
RE-doped Ga2O3 powders was using a now combustion synthesis technique (Hydr
azine/metal nitrate method). The preparation of Eu-doped GaN was using the
ammonium. hexafluoro-metal method. The powders were crystalline and high-pu
rity as determined by XPS, EDS, SEM and XRD measurements.