The hot carrier temperature and the impurity band in Kane's theory for heavily doped semiconductor photoluminescence analysis

We analyzed the photoluminescence (PL) spectra on heavily doped GaAs:Sn sam ples by Kane's theory including a Lorentzian, a Gaussian and the hot carrie r temperature. The band gap, the Fermi level, and the Urbach tail were the fitting parameters. Good results were obtained when the theoretical and exp erimental values were compared for the three parameters. The Urbach energy magnitude and the topological disorder parameter increased when the impurit y concentration augment. The average phononic participation was very close with the tabulated values. New information about a shoulder in the high ene rgy side was obtained, too.