The hot carrier temperature in the analysis of the free to acceptor photoluminescence transition

We analyzed the free to acceptor (e-A) photoluminescence transition on a Ga As:Ge sample using the hot carrier temperature and the Kane's DOS, This lat ter temperature was calculated by the spectra largest energy tail. While th e lattice temperature was put in the e-A Eagles' shape equation, the fittin g was poor but if the modified line was put into the equation, the fitting was better. So, the ionization impurity energy, the band gap, the Fermi lev el and the band tail can be measured with a better precision than the measu rements traditionally made with this method. Additional information about p honons participant can be obtained. In conclusion, the hot carrier temperat ure and the density of states due to the impurity concentration should be u sed in the e-A transition photoluminescence analysis.