Luminescence studies in thermal oxide films with Si implantation

The objective of this work is to investigate the origin of the emission ban ds of Photo and Cathodo - luminescence (PL, CL) in thermal silicon dioxide films implanted with Silicon. The films were obtained by 150 KeV Si implant ation into thermal oxide, with doses of 1 x 10(16) cm(-2) and 1 x 10(17) cm (-2). Thermal treatments of 0, 30, 60 and 180 minutes in nitrogen at 1100 d egreesC were applied. We found light emission in the visible range, the ban ds change with the ion implantation conditions and thermal treatments. The as implanted samples present photoluminescence bands around 1.95 eV and 2.4 eV for both doses, and they disappear with thermal treatments. After annea ling, the low dose samples has a photoluminescence band at 2.6 eT while tho se of dose of 1 x 10(17) cm(-2) has a bond centered at 1.7 eV The intensity of the bands changes with thermal treatment The cathodoluminescence bands are at 2.7 eV for both implantation doses in samples with and without therm al treatments. A discussion of the results and conclusions that contribute to better understand this nowadays controversial subject is presented.