Properties of ZnO : Al thin films, obtained by the sol-gel method

Authors
Altamirano-Juarez, DC Castanedo-Perez, R Jimenez-Sandoval, O Jimenez-Sandoval, S Marquez-Marin, J Torres-Delgado, G Maldonado-Alvarez, A
Citation
Dc. Altamirano-juarez et al., Properties of ZnO : Al thin films, obtained by the sol-gel method, MOD PHY L B, 15(17-19), 2001, pp. 730-732
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MODERN PHYSICS LETTERS B
ISSN journal
02179849 → ACNP
Volume
15
Issue
17-19
Year of publication
2001
Pages
730 - 732
Database
ISI
SICI code
0217-9849(20010820)15:17-19<730:POZ:AT>2.0.ZU;2-0
Abstract
M-doped ZnO thin films have been prepared by the sol-gel technique, on slid e-glass substrates. Al(NO3)(3). 9H(2)O was used as aluminum source and the doping range was 0.001-20 at%. The effect of the Al concentration in soluti on on the microstructure of the films is presented. The transmittance spect ra, as well as the sheet resistance measurements, show the presence of elec trically-active aluminum in the films.