Citation
P. Salazar et al., Photoluminescence from amorphous silicon oxide films prepared by HFCVD technique, MOD PHY L B, 15(17-19), 2001, pp. 756-759
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MODERN PHYSICS LETTERS B
ISSN journal
02179849
→ ACNP
Volume
15
Issue
17-19
Year of publication
2001
Pages
756 - 759
Database
ISI
SICI code
0217-9849(20010820)15:17-19<756:PFASOF>2.0.ZU;2-I
Abstract
The photoluminescence (PL) properties of hydrogen (H) rich silicon oxide fi
lms prepared by hot filament enhanced chemical vapor deposition (HFCVD) hav
e been studied. The observed PL change follow the change in the hydrogen in
corporation, detected by transmission Fourier transform spectroscopy (FTIR)
. FTIR spectra show that the oxygen and hydrogen atoms are bonded to the sa
me silicon atom. There is no evidence from the formation of OH groups.