Blue photoluminescence in GaAs(N) nanowhiskers

GaAsN nanostructured thin films have been deposited using the radio frequen cy sputtering technique. Films are formed by filament-like, nanocrystallite s with a sharp grain size distribution. The measured nanowhisker average di ameter range about 3.9 to 4.1 mn. The film structure was cubic with a prefe rential (1,1,1) orientation. Particle size effects were observed in the pho toluminescence emission spectra. The blue emission (lambda =425-432 nm) was due to the quantum confinement effect with a effective band gap of 292 eV and a quantum yield of about 92% of efficiency.