In this work we show the results on the growth and optical characterization
of TiO2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room t
emperature with different Eu concentrations by sol-gel on Si and Coming gla
ss substrates. A different crystalline structure is developed for the films
deposited on Coming glass than those deposited on Si as observed from x-ra
y diffraction experiments. Room and low temperature photoluminescence (PL)
was measured by using two different lines (325 and 442 nm) of a HeCd laser.
A strong PL signal associated to the D-5(0)--> F-7(2) transition from Eu+3
was observed. A better emission was obtained from those films deposited on
Si substrates. Finally, the evolution of the PL signal is studied when the
samples are annealed at different temperatures in O-2 atmosphere.