Results on the fabrication and characterisation of thin films of the novel
host, titania (TiO2), for the Tb3+ activator ion are reported. The titania
films were produced by the sot-gel process at room temperature using the di
p coating method and deposited on silicon and coming glass substrates. It i
s shown that a different surface morphology is developed for the TiO2:Tb fi
lms deposited on different substrates. When enough amount of Th is incorpor
ated and, a He-Cd 325 nm photoexcitation is used as excitation line, the fi
lms show green photoluminescence (PL) signal associated with the D-5(4) -->
F-7(j) transition of the electronic structure of Tb3+ plus an broad band d
ue to matrix's defects. The PL emission has better characteristics for the
films deposited on silicon wafers.