The room temperature growth of Au on Si(lll) 7 x 7 has been followed c
ontinuously with second-harmonic generation, and at selected coverages
with low energy electron diffraction and Auger electron spectroscopy,
during the evaporation of the first 15 monolayers. A fast decay of th
e second-harmonic signal in the submonolayer regime is associated with
disordering of the 7 x 7 structure. This is followed by a local maxim
um at about 1 monolayer coverage. The origin of this maximum is not ye
t fully understood. In the range from 2 to 5 monolayers, the signal va
riations reflect the formation of Au islands with areas of free Si in
between. Above 5 monolayers second-harmonic generation shows increasin
g order in the system which is ascribed to the creation of an ordered
Au/Si interface, starting when a closed Au layer is formed. Annealing
of the room temperature deposited Au layer leads to interface ordering
even at low temperatures where no superstructure is observable with l
ow energy electron diffraction.