FABRICATION OF NANOSTRUCTURES USING MBE AND MOVPE

Two different fabrication techniques to obtain nanometer scale structu res without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour p hase epitaxy. Quantum confinement of carriers is achieved by the growt h of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etchin g through the gold mask produces a high density of GaAs columns with d iameters down to 20nm.