K. Tarnay et al., THE IONIZATION PROCESS OF ALPHA-PARTICLES IN MESOSCOPIC STRUCTURES - SIMULATION BY MONTE-CARLO METHOD, Physica scripta. T, 54, 1994, pp. 256-262
A first principle based quasi-deterministic 3D particle dynamics Monte
Carlo simulation method was developed for examining mesoscopic (sub-h
alf micron) Si electron devices. Applying a novel method for calculati
ng the field and potential distributions, the real trajectories of the
carriers are exactly followed. Consequently, an important feature of
this method is that all Coulomb scatterings are inherently taken into
account. A description of the physical backgound, the models and the s
imulation principle is given. The boundary conditions and a determinis
tic model for Auger recombination is also presented. Finally a simulat
ion example is described: the evaluation of a dense hole-electron plas
ma induced by an a particle, passing through a reverse biased pn-junct
ion. In connection with this example we also detail the model applied
for the carrier generation induced by ct particles penetrating the dev
ice.