THE IONIZATION PROCESS OF ALPHA-PARTICLES IN MESOSCOPIC STRUCTURES - SIMULATION BY MONTE-CARLO METHOD

A first principle based quasi-deterministic 3D particle dynamics Monte Carlo simulation method was developed for examining mesoscopic (sub-h alf micron) Si electron devices. Applying a novel method for calculati ng the field and potential distributions, the real trajectories of the carriers are exactly followed. Consequently, an important feature of this method is that all Coulomb scatterings are inherently taken into account. A description of the physical backgound, the models and the s imulation principle is given. The boundary conditions and a determinis tic model for Auger recombination is also presented. Finally a simulat ion example is described: the evaluation of a dense hole-electron plas ma induced by an a particle, passing through a reverse biased pn-junct ion. In connection with this example we also detail the model applied for the carrier generation induced by ct particles penetrating the dev ice.