E. Velmre et al., A THEORETICALLY ACCURATE MOBILITY MODEL FOR SEMICONDUCTOR-DEVICE DRIFT-DIFFUSION SIMULATION, Physica scripta. T, 54, 1994, pp. 263-267
A novel semiconductor charge carrier mobility model obtained by Kohler
's variational method for Boltzmann transport equation solution is pre
sented. Acoustic phonon scattering, ionized impurity scattering, and c
arrier-carrier scattering are taken into account. Majority electron an
d hole mobilities in n- and p-type silicon versus impurity and carrier
concentration, and temperature are calculated and compared with publi
shed experimental data