A THEORETICALLY ACCURATE MOBILITY MODEL FOR SEMICONDUCTOR-DEVICE DRIFT-DIFFUSION SIMULATION

Authors
VELMRE E UDAL A KOCSIS T MASSZI F
Citation
E. Velmre et al., A THEORETICALLY ACCURATE MOBILITY MODEL FOR SEMICONDUCTOR-DEVICE DRIFT-DIFFUSION SIMULATION, Physica scripta. T, 54, 1994, pp. 263-267
Citations number
16
Categorie Soggetti
Physics
Journal title
Physica scripta. T → ACNP
ISSN journal
02811847
Volume
54
Year of publication
1994
Pages
263 - 267
Database
ISI
SICI code
0281-1847(1994)54:<263:ATAMMF>2.0.ZU;2-Z
Abstract
A novel semiconductor charge carrier mobility model obtained by Kohler 's variational method for Boltzmann transport equation solution is pre sented. Acoustic phonon scattering, ionized impurity scattering, and c arrier-carrier scattering are taken into account. Majority electron an d hole mobilities in n- and p-type silicon versus impurity and carrier concentration, and temperature are calculated and compared with publi shed experimental data