THERMAL-OXIDATION OF N-TYPE AND P-TYPE 6H SILICON-CARBIDE

Thermal oxides have been grown on monocrystalline 6H silicon carbide s amples (n-type and p-type) with both carbon face and silicon face. The oxidation was performed in a dry oxygen ambient at 1523K with or with out the addition of TCA (Trichloroethane), or in wet pyrogenic steam a t 1473 K. Polysilicon gates doped with POCl3 were used for electrical characterisation by capacitance-voltage measurements at room temperatu re. Large flatband voltage shifts indicate fixed oxide charges up to10 (13)cm(-2).