Lp. Zheng et al., Dependence of Ni, Al and B boundary concentrations on the B bulk concentration for the Ni3Al-x at.% B grain boundary, NUCL INST B, 184(3), 2001, pp. 354-360
We have applied the embedded atom method (EAM). to calculate boundary conce
ntration distributions of Ni, Al and B, and B probabilities in the "interst
itial" and, the "substitutional" sites, at the Ni3Al-x at.% B (100% Ni\100%
Ni) [001]/Sigma5(210)/36.87 degrees. grain boundary at the equilibrium. We
propose that the bulk effects of B on the grain boundary include the posit
ive effect on the Ni enrichment at the grain boundary, i.e. the B atoms ind
uce Ni atoms to substitute into Al sites, the negative effect on it, i.e. t
he B atoms substitute into Ni sites, and the neutral effect on it, i.e. the
B atoms insert into interstices in the grain boundary. Our calculations sh
ow that owing to combination of the positive effect and the negative effect
, corresponding to B-enrichment increasing, the Ni-enrichment and the Al-de
pletion become more and more obvious, when x increases from 0.1 to 0.5. The
n, corresponding to B-enrichment decreasing, the Ni-enrichment and the Al-d
epletion also become more and more obvious, when x decreases from 0.9 to 0.
5. Thus, between low (x = 0.1) and high (x = 0.9) B bulk concentrations, th
ere is a B bulk concentration (x = 0.5), at which the Ni-enrichment and the
Al-depletion become the most obvious, even if Ni is approximately saturate
d. (C) 2001 Elsevier Science B.V. All rights reserved.