Structural characterization of high-dose C++N+ ion-implanted (111) Si

Authors
Barbadillo, L Hernandez, MJ Cervera, A Rodriguez, P Piqueras, J Molina, SI Morales, FM Araujo, D
Citation
L. Barbadillo et al., Structural characterization of high-dose C++N+ ion-implanted (111) Si, NUCL INST B, 184(3), 2001, pp. 361-370
Citations number
38
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
184
Issue
3
Year of publication
2001
Pages
361 - 370
Database
ISI
SICI code
0168-583X(200111)184:3<361:SCOHCI>2.0.ZU;2-9
Abstract
(111) silicon wafers were implanted with high ion doses of C+, N+ and C+ N+, from 1 x 10(16) to 6.7 x 10(17) cm(-2), well over the amorphization dos e. For the largest dose, the mean impurity concentration in the implanted r egion (of about 1000 Angstrom) at 30 keV is expected to be similar to the S i atom density. Silicon nitride and silicon carbide formation is detected i n the as-implanted samples. After annealing at 1200 degreesC a trend to seg regation of Si3N4 and SiC in separated layers is observed, and a polycrysta lline Si overlayer is formed. (C) 2001 Elsevier Science B.V. All rights res erved.