Dynamical offset charges in single-electron transistors - art. no. 186805

Citation
De. Grupp et al., Dynamical offset charges in single-electron transistors - art. no. 186805, PHYS REV L, 8718(18), 2001, pp. 6805
Citations number
22
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
8718
Issue
18
Year of publication
2001
Database
ISI
SICI code
0031-9007(20011029)8718:18<6805:DOCIST>2.0.ZU;2-V
Abstract
To explain our observations of anomalous, transport through a single-electr on transistor we propose a model where a charged two-level system is couple d to the device. The state of the two-level system depends self-consistentl y on the state of the transistor, leading to stable gate-voltage-controlled configurations of the offset charge at low bias, and dynamical switching b ehavior at high bias. This phenomenon may impact applications of single ele ctronics, as, well as fundamental measurements in quantum dots.