Dislocation related photoluminescence in silicon - art. no. 187404

Dislocation related photoluminescence in Si and SiGe is attributed to stabl e interstitial clusters bound to 60 degrees dislocations. Density functiona l based total energy calculations in Si give binding energies between 1.5 a nd 3.6 eV for I-3 and I-4 clusters with 90 degrees and 30 degrees partials. They possess donor levels around E-v + 0.4 eV which are consistent with de ep level transient spectroscopic studies on p-Si. It is further suggested t hat the clusters would act as. the obstacles to the movement of dislocation s which may have been observed in recent transmission electron microscopy s tudies.