MEASUREMENT OF HYBRID-PI EQUIVALENT-CIRCUIT PARAMETERS OF BIPOLAR JUNCTION TRANSISTORS IN UNDERGRADUATE LABORATORIES

In this paper we report on a simple and accurate technique for the mea surement of the small-signal y-parameters of a bipolar transistor at a given de bias using a standard LCR meter which is readily available i n undergraduate electronics laboratories, We demonstrate how the hybri d-pi equivalent circuit of the transistor can be extracted from the me asurement using a spreadsheet, Practical results are presented and the accuracy of the extracted hybrid-pi parameters is checked by comparis on between PSPICE simulation and actual measurement of the frequency r esponse of a common-emitter amplifier built with the transistor in que stion.