Photosensitivity of a-C : H/c-Si heterojunctions

Layers of a-C:H were grown on c-Si wafers by the glow discharge method in a CH4 + Ar gaseous mixture. The electrical and photoelectric properties of a -C:H/c-Si heterojunctions were studied. It was found that the heterojunctio ns display rectification and broad-band photovoltaic effects. It is shown t hat the polarization sensitivity in these structures occurs at an oblique i ncidence of linearly polarized light under the illumination of the surface coated with a-C:H layers. The observed oscillations in the spectrum of the coefficient of induced photopleochroism are attributed to the interference of light in these layers. (C) 2001 MAIK "Nauka/Interperiodica".