Electrical characteristics of single-gate interference transistors based on various semiconductor materials

The current-voltage and high-frequency characteristics of single-gate inter ference T transistors based on quantum wires made of various semiconductors , specifically, Si, Ge, GaAs, InAs, GaSb, InSb, GaP, and InP, were studied theoretically. Two scattering mechanisms were taken into account in the T-t ransistor model in order to assess their effect on the electrical character istics of devices. The adequacy of the suggested model was verified by comp aring the results of simulation with experimental data. The calculations we re performed using the QW-NANODEV subsystem for simulating the devices base d on quantum wires. (C) 2001 MAIK "Nauka/Interperiodica".