Medium-range order and optoelectronic properties of a tetrahedrally coordinated hydrogenated amorphous semiconductor

Correlations were determined between the medium-range-order characteristic in an a-Si:H structure and the density of defects, their charge state, the optical band gap, and its spatial fluctuations. It was shown that the modif ication of the structure at the medium-range-order level, owing to the form ation of nanoinclusions, can lead to a radical increase in photoconductivit y and to ordering of the structure of the amorphous matrix. (C) 2001 MAIK " Nauka/Interperiodica".